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机构地区:[1]福建师范大学实验中心,福州35000 [2]清华大学分析中心,北京100084
出 处:《无机化学学报》1999年第5期661-666,共6页Chinese Journal of Inorganic Chemistry
基 金:国家教育委员会回国留学人员工作资助
摘 要:The solvothermal technique was used for the synthesis of [Mn(en)\-3]CdSnTe\-4 (Ⅰ). The crystal structure has been determined by single crystal X ray diffraction techniques. The crystal belongs to the triclinic, space group \%P\%1(No.1) with unit cell \%a=9.134(2), b=10.085(3), c=12.691(3)(), α=73.52(2)°, β=86.05(2)°, γ=76.43(2)°, V =1089.7(5)\+3, Z=2. The results show that the structure is an one dimensional framework containing a linear chain Zintl anion, \+1\-∞[CdSnTe\-4]\+\{2-\} and a complex cation, \+1\-∞[Mn(en)\-3]\+\{2+\}, Optical studies on the powder sample of Ⅰ suggested that the compound is a semiconductor with a band gap of 1.45 eV.The solvothermal technique was used for the synthesis of [Mn(en)\-3]CdSnTe\-4 (Ⅰ). The crystal structure has been determined by single crystal X ray diffraction techniques. The crystal belongs to the triclinic, space group \%P\%1(No.1) with unit cell \%a=9.134(2), b=10.085(3), c=12.691(3)(), α=73.52(2)°, β=86.05(2)°, γ=76.43(2)°, V =1089.7(5)\+3, Z=2. The results show that the structure is an one dimensional framework containing a linear chain Zintl anion, \+1\-∞[CdSnTe\-4]\+\{2-\} and a complex cation, \+1\-∞[Mn(en)\-3]\+\{2+\}, Optical studies on the powder sample of Ⅰ suggested that the compound is a semiconductor with a band gap of 1.45 eV.
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