溅射功率对AZO透明导电薄膜的影响  

Effect of Sputtering Power on the AZO Transparent Conductive Oxide Thin Films

作　　者：史永胜[1] 陈阳阳[1] 宁青菊[1] 秦双亮[1] 宁磊[1] 

机构地区：[1]陕西科技大学电气与信息工程学院,西安710021

出　　处：《材料导报》2011年第6期42-44,共3页Materials Reports

基　　金：国家高技术研究发展计划(863计划)项目(2001AA3130090);陕西省教育厅专项(07JK188)

摘　　要：采用射频磁控溅射法在玻璃衬底上沉积了AZO透明导电薄膜,并用原子力显微镜观测了薄膜表面形貌,XRD测试了薄膜相结构和单色仪测试了薄膜透射率。结果表明,制备的薄膜具有高度c轴择优取向性,其表面平整,晶粒均匀致密。当溅射功率为180W、溅射气体流量为15sccm、基片温度为200℃时制得的薄膜方阻为10Ω/□,在可见光区平均透射率大于85%。AZO transparent conductive oxide thin films were deposited by RF magnetron sputtering technique, the surface morphology of AZO thin films was analyzed by AFM, crystal structure was tested by XRD, AZO transparency was measured by monoehromator. The result shows that ZAO films are highly oriented along c axis and have good electrical and optical properties. When the Ar gas flow is 15sccm, sputtering power is 180W,the substrate temperature is 200℃ at the optimized growing parameters： ZAO films＇ optimal transmittance over is 85% on average in the visible region and the square resistance is 10Ω/□.

关 键 词：AZO 射频磁控溅射 溅射功率 方阻 透射率 

分 类 号：TB383.2[一般工业技术—材料科学与工程]