多孔硅紫外发光性质的研究  

Intense 310nm Ultraviolet Emission from Porous Silicon Prepared by Hydrothermal Etching

作　　者：王秀丽[1,2] 冯兆池[1] 石建英[1] 李灿[1] 

机构地区：[1]中国科学院大连化学物理研究所催化基础国家重点实验室,大连116023 [2]中国科学院研究生院,北京100049

出　　处：《光散射学报》2010年第4期329-332,共4页The Journal of Light Scattering

基　　金：国家自然科学基金(20903093)

摘　　要：采用水热刻蚀技术制备多孔硅粉末。紫外激光244 nm激发时,多孔硅呈现出310 nm的强紫外发光。随着研磨时间的延长,多孔硅结构消失,紫外发光带也随之消失。氧气热处理后,多孔硅表面被氧化生成氧化硅薄层,同样造成紫外发光带的消失。我们认为310 nm紫外发光来源于硅纳米结构中电子和空穴的直接禁带结构辐射复合。Porous silicon was prepared with hydrothermal etching method.Porous silicon exhibits the 310 nm intense ultraviolet emission with 244 nm laser excitation.The ultraviolet emission disappears gradually with the ground time increasing,because of the damage of the structure of porous silicon.The transformation from silicon to silica also makes the disappearance of the ultraviolet emission.The 310 nm ultraviolet emission is assigned to the radiative recombination via direct band gap transition between electrons and holes in nanosized silicon.

关 键 词：多孔硅 光致发光 紫外发光 

分 类 号：O472.3[理学—半导体物理] O657.3[理学—物理]