闪锌矿In_xGa_(1-x)N/GaN量子点的光学特性  

The optical properties of zinc-blende In_xGa_(1-x)N/GaN quantum dot

作　　者：吴花蕊[1] 李在林[1] 

机构地区：[1]新乡学院物理系,河南新乡453003

出　　处：《云南师范大学学报（自然科学版）》2011年第2期65-68,共4页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：河南省教育厅自然科学研究计划项目(2009B140006)

摘　　要：在有效质量近似下,通过变分方法研究了束缚于闪锌矿InGaN/GaN量子点中的激子态。详细研究了振子强度和发光波长随InGaN/GaN量子点结构参数和量子点内In含量的变化关系。数据结果表明:量子点结构参数和In含量对闪锌矿InGaN/GaN量子点的振子强度和发光波长有重要的影响;激子效应使量子点发光波长红移。Within the framework of effective-mass approximation,exciton states confined in zinc-blende（ZB） InGaN/GaN quantum dot（QD） are investigated by means of a variational approach.The oscillator strength and emission wavelength are investigated as functions of QD structural parameters and In contend of InGaN/GaN in deatail.Numerical results show clearly that both the QD size and In content of InGaN/GaN have a significant influence on oscillator strength and emission wavelength in the ZB InGaN/GaN QD.The emission wavelength is increased due to the exciton effect.

关 键 词：闪锌矿 InGaN/GaN量子点 振子强度 发光波长 

分 类 号：O472[理学—半导体物理]