MPP CCD扩散暗电流温度特性分析  

Analysis of Temperature Characteristic of Diffusion Dark Current of MPP CCD

作　　者：雷仁方[1] 李仁豪[1] 廖晓航[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2011年第1期15-17,23,共4页Semiconductor Optoelectronics

摘　　要：研究了MPP CCD扩散暗电流的温度特性,分析了扩散暗电流在不同温度下对器件总暗电流的贡献和不同处理方式对评估器件高温暗电流的影响,并对此进行了实验验证。结果表明,扩散暗电流在高温下对器件总暗电流的影响很大,占据支配地位,是器件高温暗电流的主要来源。提出了两种优化方法,以降低扩散暗电流对器件高温暗电流的影响,提高MPP CCD的高温环境工作能力。The temperature characteristic of diffusion dark current of MPP CCD was investigated. The contribution of diffusion dark current to CCD＇s total dark current under different temperatures were analyzed. Different methods for evaluating high-temperature dark current were introduced and demonstrated experimently. The results indicate that diffusion dark current is the prime source of CCD＇s total dark current under high temperature. In order to decrease the effect of diffusion dark current and improve the operational capability of MPP CCD under high temperature, two methods are put forward.

关 键 词：扩散暗电流 温度 MPP CCD 

分 类 号：TN386.5[电子电信—物理电子学]