溅射功率对Co-ZnO薄膜结构和光电性能的影响  

Effects of Sputtering Power on Structural and Photoelectric Properties of Co-ZnO Thin Films

作　　者：张剑华[1] 

机构地区：[1]湘南学院物理系,湖南郴州423000

出　　处：《半导体光电》2011年第1期69-73,113,共6页Semiconductor Optoelectronics

基　　金：湖南省教育厅基金项目(09C920)

摘　　要：以氧化锌陶瓷靶和金属钴靶为靶材,利用磁控共溅射方法制备钴掺杂氧化锌(Co-ZnO)薄膜。研究了溅射功率对薄膜的结构、光学和电学性能的影响。结果表明:薄膜具有类似于ZnO的六方纤锌矿结构,并沿C轴择优生长;作用在Co靶上的溅射功率对Co-ZnO薄膜的结构和光电性能有一定的影响。在其他条件不变的情况下,当Co靶上的溅射功率设置为10 W时,样品的结晶质量、表面形貌、光透过率、光致发光以及导电性能综合评价最优。Co-ZnO thin films were prepared on glass substrates using RF magnetron sputtering.The effects of sputtering power on the structural,electrical and optical properties of the films were studied.Test results show that the films are single phase and have wurtzite structure with c-axis orientation,and the sputtering power has a significant influence on the crystal quality,conductivity and optical properties of Co-ZnO films.It is thought as an optimal condition for the growth of Co-ZnO thin film when the sputtering power on the Co target is set to be 10 W.

关 键 词：Co-ZnO薄膜 溅射功率 霍尔迁移率 透射光谱 光致发光谱 

分 类 号：O484.4[理学—固体物理]