在SiO_2和Si_(3)N_4膜上用RTCVD法沉积多晶硅薄膜的研究  

THE RESEARCH ON POLYCRYSTALLINE SILICON THIN FILM DEPOSITED ON SiO 2 AND Si 3N 4 BY RTCVD

作　　者：王文静[1] 许颖[1] 罗欣莲 于元[1] 赵玉文[1] 于民[2] 李国辉[2] 

机构地区：[1]北京市太阳能研究所,北京100083 [2]北京师范大学低能物理研究所,北京100875

出　　处：《太阳能学报》1999年第3期298-301,共4页Acta Energiae Solaris Sinica

摘　　要：报道了在 Ｓｉ Ｏ２ 和 Ｓｉ３ Ｎ４ 膜上用 Ｒ Ｔ Ｃ Ｖ Ｄ 法直接沉积多晶硅薄膜的实验结果，在这两种薄膜上制备出了具有柱状晶粒的多晶硅薄膜，发现两者在薄膜的结构和结晶取向上有很大不同。用 Ｒ Ｔ Ｃ Ｖ Ｄ 法在 Ｓｉ Ｏ２ 膜上沉积的多晶硅膜，晶粒较大，晶粒间的空隙也较大，晶粒的择优取向为〈１１１〉；在 Ｓｉ３ Ｎ４ 膜上沉积的多晶硅薄膜，晶粒尺寸较小，晶粒致密，晶粒间基本无空隙，晶粒的择优取向为〈１００〉Results of polycrystalline silicon thin film on SiO 2 and Si 3N 4 fabricated by RTCVD are reported.The columnar structure of the crystalline grains is very well recognizable for the films on SiO 2 and Si 3N 4.The microstructure and preferential grain orientation of the polycrystalline silicon films deposited directly on SiO 2 and Si 3N 4 are very different.There are many gaps among the grains for the film on SiO 2,but almost no any gaps for the film on Si 3N 4.The preferential grain orientation of silicon film on SiO 2 is 〈111〉,and that on Si 3N 4 is 〈100〉.

关 键 词：多晶硅 薄膜 化学汽相沉积 衬底 太阳电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动]