嵌入式闪存适用的新型低压高效率电荷泵电路  

Low-voltage,high-efficiency charge pump circuit for embedded flash memory

作　　者：王雪强[1] 伍冬[1] 谯凤英[1] 潘立阳[1] 张志刚[1] 周润德[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《清华大学学报（自然科学版）》2011年第3期340-344,共5页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金资助项目(60876076)

摘　　要：随着片上系统(SoC)电源电压的降低,嵌入式快闪存储器内部电荷泵电路的电压增益不断下降。为提高低电源电压下电荷泵电路的效率,提出了一个基于两路互补结构的高效率电荷泵电路,并设计了栅压提高电路与衬底调节电路,二者的共同作用可以有效地减少传输电压的损失,提高电荷泵电路的电压增益。模拟结果表明:当电源电压为1.5V时,相比于传统的电路结构,所提出的电荷泵电路电压增益有很大的提高。该电路特别适用于低电源电压下工作的嵌入式快闪存储器。Reduction of the power supply voltage for system on chip（SoC） designs has reduced the voltage gain of the charge pump circuit in embedded flash memory（eFlash）.The efficiency of the charge pump circuit for low supply voltages is improved by a charge pump circuit based on the dual-path circuit structure.The circuit uses a feedback inverter to enhance the gate voltage of the charge transfer switch（CTS）,with a body-controlled circuit to eliminate the CTS body effect,thus reducing the threshold voltage loss.Tests show that the charge pump circuit output voltage is more than twice that of a conventional circuit,so this charge pump circuit is very useful for low-voltage embedded flash memory.

关 键 词：电荷泵电路设计 低电压 高效率 嵌入式闪存 

分 类 号：TN402[电子电信—微电子学与固体电子学]