基于Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料色散特性的高灵敏度慢光干涉仪  

High sensitivity slow light interferometer based on dispersive property of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor materials

作　　者：蔡元学[1] 掌蕴东[1] 党博石[1] 吴昊[1] 王金芳[1] 袁萍[1] 

机构地区：[1]哈尔滨工业大学可调谐激光技术国家级重点实验室光电子技术研究所,哈尔滨150080

出　　处：《物理学报》2011年第4期102-107,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2007AA12Z112);国家自然科学基金(批准号:60878006)资助的课题~~

摘　　要：分析了Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料的光学特性,证明半导体慢光介质不但可以提高干涉仪的光谱灵敏度,而且可以获得远大于气体慢光介质的工作光谱范围.实验证明,基于慢光介质GaAs的干涉仪光谱灵敏度相对于传统的干涉仪提高约3.2倍.We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors.The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor.Furthermore,the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium.Moreover,we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.

关 键 词：干涉仪 非线性光学 Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料 

分 类 号：O437[机械工程—光学工程] O472.3[理学—光学]