气相沉积硅薄膜微结构及悬挂键缺陷研究  

Research on the Microstructures and Dangling Bond Density of Vapor-Deposited Si Films

作　　者：黄香平[1,2] 肖金泉[2] 邓宏贵[1] 杜昊[2] 闻火 黄荣芳 闻立时[1,2] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083 [2]中国科学院金属研究所,沈阳110016 [3]武汉华硅太阳能科技有限责任公司,武汉430074

出　　处：《真空科学与技术学报》2011年第2期178-182,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金委工程与材料学部青年基金(KFJJ200902);电子薄膜与集成器件国家重点实室开放课题

摘　　要：在单晶Si（100）基体上利用电子回旋共振等离子体增强化学气相沉积法制备硅薄膜,并采用X射线衍射谱（XRD）、透射电镜（TEM）、Raman光谱、电子自旋共振（ESR）波谱等实验方法研究了不同Ar流量下硅薄膜微结构及悬挂键密度的变化。XRD及TEM实验结果得出,制备的硅薄膜的晶粒尺寸为12~16 nm,属纳晶硅薄膜。薄膜结晶度随镀膜时Ar流量增大而增大,而悬挂键密度则先迅速减小而后缓慢增大。当Ar流量为70 ml/min（标准状态）时,薄膜的悬挂键密度达到最低值4.42×1016cm-3。得出最佳Ar流量值为70 ml/min。The Si nano-films were grown by electron cyclotron resonance plasma enhanced chemical vapor deposition（ECR-PECVD） on Si（100） substrates.The impact of argon flow rate on the film growth was studied.The microstructures and variations in dangling bond density were characterized with X-ray diffraction,transmission electron microscopy,and electron spin resonance spectroscopy（ESR）.The results show that the argon flow rate significantly affects the microstructures and dangling bond density of the as-deposited Si nano-films.For example,higher Ar flow rate promotes crystallization.As the Ar flow rate increases,the dangling bond density first rapidly increases to a peak,then,slowly decreases.At 70 ml/min,the dangling bond density minimized to 4.42×1016 cm-3.

关 键 词：纳晶硅 悬挂键密度 电子自旋共振 RAMAN光谱 

分 类 号：O474[理学—半导体物理] O766[理学—物理]