U及Si基表面Ti-Al薄膜的制备及组织结构研究  

Growth and Characterization of Ti-Al Films on Uranium and Silicon Substrates

作　　者：刘天伟[1] 朱生发[2] 黄河[2] 江帆[2] 唐凯[2] 魏强[2] 吴艳萍[2] 

机构地区：[1]表面物理与化学重点实验室,绵阳621907 [2]中国工程物理研究院,绵阳621900

出　　处：《真空科学与技术学报》2011年第2期242-246,共5页Chinese Journal of Vacuum Science and Technology

基　　金：中国工程物理研究院行业发展基金项目(20080XXX)

摘　　要：利用Gibbs自由能判据计算了室温和1000 K温度下Ti-Al体系非晶形成成分区间。计算结果表明,Ti-Al非晶形成区间为10%~80%（原子比）Ti。在计算结果的指导下,设计薄膜的成分区间,利用非平衡多靶溅射沉积开展了Ti-Al非晶薄膜在Si和U基上的形成研究。实验在不同脉冲偏压、沉积速率、基体初始温度下进行,薄膜组元成分通过不同靶材的沉积速率来控制完成。利用X射线衍射、扫描电镜、俄歇分析谱仪分析了薄膜的组织结构、表面及界面形貌和成分区间。结果表明,Ti-Al体系在U基上未能获得非晶薄膜,而在Si基上获得了非晶薄膜。所选工艺下,Si基上Ti-Al非晶薄膜形成的成分区间为25%~40%Ti,60%~75%Al。为了能在U基上获得非晶薄膜,加入了第三组元Ni,成功地获得了Ti-Al-Ni非晶薄膜。The Ti-Al amorphous composite films were grown by mid-frequency twin-target magnetron sputtering on uranium and silicon substrates,based on calculations of the Gibbs free energy at a substrate temperature of 1000 K and room temperature.The impacts of the deposition conditions,including the pulsed bias,deposition rate,substrate species,and initial substrate temperature,on the microstructures and properties of the film were studied.The Ti-Al coatings were characterized with X-ray diffraction,scanning electron microscopy,and Auger electron spectroscopy.The results show that good amorphous Ti-Al films with 25%～40%（at.）Ti and 60%～75%（at.）Al can be deposited Si substrates,and that addition of nickel makes it possible to deposit amorphous Ti-Al-Ni films on uranium substrate.

关 键 词：U TI-AL 制备 结构 

分 类 号：O484[理学—固体物理]