硼源浓度对钛基掺硼金刚石薄膜生长的影响  

Influence of Boron Concentration on the Growth of Boron-doped Diamond Film on Ti Substrate

作　　者：王文君[1] 汪建华[1] 王均涛 辛永磊 熊礼威[1] 刘峰 

机构地区：[1]武汉工程大学等离子体化学与新材料重点实验室,武汉430073 [2]中船重工725所海洋腐蚀与防护重点实验室,青岛266101

出　　处：《表面技术》2011年第2期58-61,共4页Surface Technology

摘　　要：利用微波等离子体化学气相沉积法(MPCVD)在钛基底上制备了掺硼金刚石(BDD)薄膜。研究了硼源浓度对BDD薄膜生长的影响。分别采用扫描电子显微镜,拉曼光谱,X射线衍射技术对薄膜的表面形貌、残余应力、择优取向及TiC含量进行了分析。结果表明,硼源浓度升高对金刚石薄膜(111)织构生长有促进作用;随着掺硼浓度的增加,TiC含量和晶粒尺寸皆减小,同时薄膜的张应力增大,缓解薄膜自身在制备过程中形成的压应力,从而更大程度上提高薄膜附着力。BDD （boron-doped diamond） thin films were deposited on titanium substrates using the microwave plasma chemical vapor deposition （MPCVD） method. The influences of the boron concentration on BDD growth on Ti was investigated. The surface morphologies, residual stress, preferred orientation and TiC layer were analyzed by scanning electron microscopy （SEM）, Raman spectroscopy and X-ray diffraction（XRD） respectively. The experimental results show that the （111） morphology is preferred with increasing boron addition. And the higher boron concentration results in an decrease in the concentration of TiC as well as the grain size, inducing a significantly higher level tensile stress to relieve the compression stress formed in deposition, and thus a greater extent to improve adhesive force.

关 键 词：硼浓度 掺硼金刚石薄膜 钛 微波等离子体化学气相沉积 

分 类 号：TB43[一般工业技术]