氧化锌/金刚石薄膜异质结紫外光探测器  

Ultraviolet Detector Based on ZnO/Diamond Film Heterojunction Diode

作　　者：黄健[1] 王林军[1] 唐可[1] 张继军[1] 夏义本[1] 鲁雄刚[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《发光学报》2011年第3期272-276,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60877017);长江学者和创新团队发展计划(IRT0739);上海市重点学科资助课题(S30107);上海市教育委员会优秀青年教师基金(shu09007);上海市教育委员会科研创新项目(08YZ04)资助

摘　　要：采用射频磁控溅射法在p型自支撑金刚石衬底上制备了高度c轴取向的n型氧化锌薄膜。研究了不同的溅射功率对氧化锌薄膜质量的影响。通过半导体特性分析系统测试了氧化锌/金刚石异质结的电流-电压特性,结果显示该异质结二极管具有良好的整流特性,开启电压约为1.6 V。在此基础上制备了结型紫外光探测器,并对其光电性能进行了研究。结果表明,在施加反向偏压的条件下,该探测器对紫外光具有明显的光响应。Highly c-axis oriented n-type ZnO films were grown on the p-type fresstanding diamond（FSD） substrates by radio-frequency（RF） magnetron sputtering method.The effects of the sputtering power on the pro-perties of ZnO films were studied.Current-voltage（I-V） characteristics of the ZnO/diamond heterojunction were examined by a semiconductor characterization system and the results showed a distinct rectifying characteristics with a turn-on voltage of about 1.6 V.The ZnO/diamond heterojunction diode was also used for ultraviolet（UV） detector application and the detector showed a significant discrimination between the UV light and the visible light under reverse bias conditions.

关 键 词：自支撑金刚石 氧化锌 探测器 异质结 

分 类 号：O472.3[理学—半导体物理] TN315[理学—物理]