酸刻蚀处理对Si(100)和Si(111)上制备CVD金刚石膜的影响  

Effect of acid etching of Si(100) and Si(111) on CVD diamond films

作　　者：魏秋平[1,2] 宋玉波[1] 余志明[1,2] 胡应涛[1] 尹登峰[1] 马莉[2] 

机构地区：[1]中南大学材料科学与工程学院,湖南长沙410083 [2]中南大学粉末冶金国家重点实验室,湖南长沙410083

出　　处：《中南大学学报（自然科学版）》2011年第3期650-657,共8页Journal of Central South University:Science and Technology

基　　金：粉末冶金国家重点实验室开放基金资助项目(2008112048);湖南省研究生创新基金资助项目(1343-74236000005);中南大学贵重仪器开放共享基金资助项目(ZKJ2008001);中南大学优秀博士论文扶持基金资助项目(2008yb015)

摘　　要：对Si(100)和Si(111)采用相同的酸刻蚀工艺,采用热丝化学气相沉积法(HFCVD)制备金刚石膜。用扫描电子显微镜、X线衍射仪和X线应力测试仪对样品的形貌、织构及残余应力进行检测、分析。研究结果表明:沉积3 h后,Si(100)和Si(111)基体上均生长出晶形比较完整,呈柱状晶方式生长的金刚石薄膜;此外,Si(100)金刚石膜表面分布着大量的微孔,通过调整沉积工艺可控制微孔的数量和尺寸,而Si(111)金刚石膜表面无微孔出现;2种基体所得薄膜都存在(111)织构,后者Si(111)还有一定的(110)织构;2种基体经酸刻蚀之后制得薄膜均无鼓泡剥离现象,二者的残余应力相差不大。The diamond films were deposited on Si（100） and Si（111） substrates pretreated with the same acid etching process via hot filament chemical vapor deposition.The morphology,texture and residual stress of the diamond films were investigated by X-ray diffractometer,scanning electron microscope and X-ray stress diffractometer.The results show that diamond films deposited on these two substrates for 3 h possess good crystal morphology with columnar shape.A great number of micro-pores are found in the film deposited on Si（100） substrate,which can be controlled by regulating the deposition parameters,and in contrast,the film deposited on Si（111） substrate displays no micro-pores.Both of the films have（111） texture,and the film deposited on Si（111） also has（110） texture in a certain degree.Mechanically,the adhesion between these two films and the substrates after acid etching is good where no striping off was found,and thus the residual stress in both film should be similar.

关 键 词：金刚石薄膜 热丝化学气相沉积 酸刻蚀 硅 

分 类 号：TG166.3[金属学及工艺—热处理]