硅微通道阵列光电化学腐蚀中通道尺寸控制技术  

Control Technology of Channel Dimension in the Photo-electro-Chemical Etching for Silicon Microchannel Arrays

作　　者：王国政[1] 熊峥[1] 王蓟[1] 秦旭磊[1] 付申成[1] 王洋[1] 端木庆铎[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2010年第3期59-62,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：高等学校博士学科点专项科研基金资助项目(200801860003)

摘　　要：高长径比硅微通道阵列在光子晶体、硅微通道板、MEMS器件等领域应用前景广阔。本文开展了硅微通道阵列光电化学方法腐蚀实验,重点研究了孔径控制技术。给出了型硅在氢氟酸溶液中的电流-电压扫描曲线,讨论了临界电流密度JPS的意义,提出了一种间接地测量JPS与腐蚀时间关系的方法,研究了暗电流密度与腐蚀时间关系及对腐蚀的影响。根据暗电流及JPS的变化规律调整腐蚀电流,实现了对孔径的控制,制备出通道深度为300m,长径比为100的硅微通道阵列结构。The application fields of high aspect ratio Si microehannel arrays have increased considerably, for exanlple, photonie crystals, Si mieroehannel plates, MEMS devices and so on. Photo-electrochemical etching （PEC） ofSi mierochannel arrays was researched, and the onntml technology of channel dimension were studied in detaiL The current-voltage curve of an n-type silicon wafer was presented in aqueous I-IF. The critical current density JPS was discussed and an indirectly method was presented to measure the relation of JPS at the pore tip and etching time, The influence of dark cun＇ent density on the characteristic of etching was researched. The relation of dark current density and the etching time was presented. The chamlel dimension al control was realized by changing the etching current density according to the YPS and dark current density. The peefect si microchannel arrays structure with the pore depth of 300m,the pore size of 3m and the aspect ration of 100 was obtamed.

关 键 词：高长径比 硅微通道阵列 光电化学腐蚀 诱导坑 暗电流密度 

分 类 号：TN144[电子电信—物理电子学]