太阳能级晶体硅中杂质的质谱检测方法  

Mass Spectrometric Methods of Impurity Analysis in Solar-Grade Crystalline Silicon

作　　者：杨旺火[1,2] 李灵锋[1] 黄荣夫[1] 杭纬[1,2] 李宁[2] 

机构地区：[1]厦门大学化学化工学院,福建厦门361005 [2]厦门大学能源研究院,福建厦门361005

出　　处：《质谱学报》2011年第2期121-128,共8页Journal of Chinese Mass Spectrometry Society

基　　金：教育部回国人员启动经费

摘　　要：太阳能级晶体硅材料中杂质的种类和含量直接影响太阳能电池的发电效率,因此硅材料中杂质含量和分布的检测至关重要。当今社会光伏产业的迅猛发展,推进了晶体硅检测技术的更新和发展。本文总结了近年来在硅材料杂质检测中所使用的方法以及这些方法的不足;比较了电感耦合等离子体质谱(ICP-MS)、辉光放电质谱(GDMS)、二次离子质谱(SIMS)和激光电离质谱(LIMS)四种可用于太阳能级晶体硅检测的原理和优缺点。The generating efficiency of solar cells is directly influenced by the varieties and contents of the impurities in solar-grade crystalline silicon,thus detecting the content and distribution of the impurities in silicon material is of great importance.The rapid development of the photovoltaic industry has promoted the development of related detection techniques.In this paper,characteristics of different types of mass spectrometric methods and their deficiencies used in silicon detection were summarized.Their principles,advantages and disadvantages of the four techniques that could use in crystalline silicon impurity detection were compared,which included the inductively coupled plasma mass spectrometry（ICP-MS）,glow discharge mass spectrometry（GDMS）,secondary ion mass spectrometry（SIMS）,and laser ionization mass spectrometry（LIMS）.

关 键 词：太阳能级晶体硅 质谱 杂质检测 

分 类 号：O657.63[理学—分析化学]