缓冲层结构RSD机理研究  

Study on the Mechanism of Buffer Layer RSD

作　　者：洪武[1] 梁琳[1] 余岳辉[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《湖北工业大学学报》2011年第1期101-105,共5页Journal of Hubei University of Technology

基　　金：国家自然科学基金项目(50907025)

摘　　要：研究大功率半导体开关RSD(Reserve Switching Dynistor)的阻断及开通特性,通过高电平大注入理论对其正向特性进行分析,器件通态压降随开通电流、基区载流子寿命、基区宽度变化,而随基区宽度变化最为剧烈.引入缓冲层压缩场结构减小基区宽度,以获得阻断特性与开通特性的折中.缓冲层结构RSD在Silvaco TCAD下阻断及开通特性.仿真结果表明,缓冲层结构提高了器件性能.The theoretical analysis is made in detail on the blocking and turn-on characteristics of power semiconductor switch RSD（Reserve Switching Dynistor）.The turn-on process is analysed on the condition of high level voltage and large injection,the switching voltage depends on the switching current,the lifetime of carriers and width of base region,and increases significantly with the width of base region,buffer layer is introduced to decrease the width and make the trade-off between the blocking and turn-on.The Silvaco TCAD blocking and switching simulation shows that buffer layer RSD has a better performance than the traditional structure.

关 键 词：大功率半导体开关 开通特性 阻断特性 缓冲层 半导体仿真 

分 类 号：TN302[电子电信—物理电子学]