GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications  

作　　者：Xiao-ying WANG Wen-ting GUO Yang-yang PENG Wen-quan SUI 

机构地区：[1]Zhejiang California International Nanosystems Institute (ZCNI), Zhejiang University, Hangzhou 310029, China

出　　处：《Journal of Zhejiang University-Science C(Computers and Electronics)》2011年第4期317-322,共6页浙江大学学报C辑（计算机与电子（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60971058);the Natural Science Foundation of Zhe-jiang Province,China (No.R107481)

摘　　要：A multi-band/multi-mode single-pole nine-throw (SP9T) switch for GSM/UMTS (global system for mobile communications/universal mobile telecommunication system) systems is demonstrated.The switch consists of a GaAs 0.5μm pseudomorphic high-electron mobility transistor (pHEMT) radio frequency (RF) switches module and Si complementary metal-oxide-semiconductor (COMS) digital module with an encoder and a DC boost circuit.High isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit,respectively.The switch shows a measured insertion loss of 0.4 dB at 0.8 GHz for GSM transmit arms,0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms,and 0.6 dB at 1.8 GHz for UMTS arms.The switch introduces 2nd and 3rd harmonic suppression levels less than 64 dBc at 37 dBm input power.Isolations between transmit and receive terminals are more than 48 dB when one transmit arm is activated.The size of the RF switches module is 1.5 mm×1.1 mm,and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.A multi-band/multi-mode single-pole nine-throw （SP9T） switch for GSM/UMTS （global system for mobile communications/universal mobile telecommunication system） systems is demonstrated. The switch consists of a GaAs 0.5 μm pseudomorphic high-electron mobility transistor （pHEMT） radio frequency （RF） switches module and Si complementary metal-oxide-semiconductor （COMS） digital module with an encoder and a DC boost circuit. High isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit, respectively. The switch shows a measured insertion loss of 0,4 dB at 0.8 GHz for GSM transmit arms, 0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms, and 0.6 dB at 1.8 GHz for UMTS arms. The switch introduces 2nd and 3rd harmonic suppression levels less than -64 dBc at 37 dBm input power. Isolations between transmit and receive terminals are more than 48 dB when one transmit arm is activated. The size of the RF switches module is 1.5 mm× 1.1 mm, and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.

关 键 词：GSM UMTS Single-pole nine-throw (SP9T) PHEMT Encoder DC boost 

分 类 号：TN432[电子电信—微电子学与固体电子学]