MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity  

作　　者：揭斌斌 薩支唐 

机构地区：[1]Department of Physics,Xiamen University [2]CTSAH Associates,Gainesville,Florida 32605,USA

出　　处：《Journal of Semiconductors》2011年第4期1-9,共9页半导体学报（英文版）

基　　金：supported by the CTSAH Associates(CTSA);founded by the late Linda Su-Nan Chang Sah;the Xiamen University,China

摘　　要：The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and maj ority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and maj ority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.

关 键 词：MOS capacitance trapping capacitance impurity deionization SPINTRONICS 

分 类 号：O471[理学—半导体物理]