High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD  

作　　者：吴海雷 孙国胜 杨挺 闫果果 王雷 赵万顺 刘兴昉 曾一平 温家良 

机构地区：[1]Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences [2]China Electric Power Research Institute

出　　处：《Journal of Semiconductors》2011年第4期44-47,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No60876003);the Chinese Academy of Sciences(No Y072011000);the Beijing Municipal Science & Technology Commission(NoD09080300500903);the Knowledge Innovation Program of the Chinese Academy of Sciences(NoISCAS2008T04)

摘　　要：High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source together with ethylene（C;H;） as a carbon precursor source.The growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers（grown for 2 h） did not deteriorate compared with the corresponding results of thinner layers（grown for 30 min）.The background doping concentration was reduced to 2.13×10;cm;.The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source together with ethylene（C2H4） as a carbon precursor source.The growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers（grown for 2 h） did not deteriorate compared with the corresponding results of thinner layers（grown for 30 min）.The background doping concentration was reduced to 2.13×1015 cm-3.The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.

关 键 词：4H-SIC homoepitaxial growth vertical hot wall CVD crystal morphology 

分 类 号：TN304.24[电子电信—物理电子学]