A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs  

作　　者：李劲 刘红侠 袁博 曹磊 李斌 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University [2]School of Information and Electrical Engineering,Hunan University of Science and Technology

出　　处：《Journal of Semiconductors》2011年第4期70-76,共7页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No708083);the Specialized Research Fund for the Doctoral Program of Higher Education(No200807010010)

摘　　要：On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

关 键 词：dual material gate double-gate MOSFET STRAINED-SI short-channel effect the drain-induced barrier-lowering 

分 类 号：TN386.1[电子电信—物理电子学] TN322.8