GaN衬底上纳米点阵列的制备及其应用研究  

Research on fabrication and application of nanodots on GaN substrate

作　　者：王新中[1] 于广辉[2] 李世国[1] 

机构地区：[1]深圳信息职业技术学院,广东深圳518029 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《光电子．激光》2011年第4期487-490,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60876011);广东省自然科学基金(10451802904006046);广东省科技计划资助项目(2010B010800013)

摘　　要：研究了纳米掩膜在材料外延生长及器件制备中的应用。通过电化学腐蚀和电子束蒸发方法在GaN表面生成Ni和SiO2纳米点阵列,经过等离子体刻蚀在Ni/GaN模板上形成GaN纳米锥形结构;利用氢化物气相外延(HVPE)方法,在SiO2/GaN模板上制备厚膜GaN材料。X射线衍射(XRD)和光致发光(PL)谱测试表明,SiO2纳米点阵能有效阻挡衬底中位错往上延伸,大大降低外延层中位错密度,并有利于厚膜GaN中应力释放。This paper investigates nanomask application in gallium nitride epitaxy and device fabrication.The nanodots Ni and SiO2 were obtained by electro-chemical erode and e-beam evaporation.Nanocones were formed on Ni/GaN template using inductively coupled plasma system and the GaN crystal was overgrown on SiO2/GaN template by hydride vapor phase epitaxy（HVPE）.It is indicated that SiO2 nanodots can obstruct from dislocations,which will obviously decrease the density of dislocation,and is propitious to the release of stress.

关 键 词：GAN 阳极Al2O3(AAO) 纳米点阵 氢化物气相外延(HVPE) 

分 类 号：TN304.2[电子电信—物理电子学]