低压高温退火对Ag掺杂ZnO薄膜性质的影响  

Effects of high annealing temperature on properties of Ag doped ZnO thin films under low oxygen pressure

作　　者：彭福川[1] 吕佩伟[1] 林林[1] 林丽梅[1] 瞿燕[1] 赖发春[1] 

机构地区：[1]福建师范大学物理与光电信息科技学院,福建福州350007

出　　处：《光电子．激光》2011年第4期545-549,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(11074041);福建省自然基金资助项目(2007J0317);福建省教育厅基金资助项目(JA08048;JB08065)

摘　　要：采用电子束蒸发在n-Si(100)衬底上沉积Ag掺ZnO(ZnO:Ag)薄膜,随后在200 Pa的O2气氛下分别在500、600、700和800℃退火4 h。用X射线衍射(XRD)仪、荧光光谱仪以及Van der Pauw方法测量ZnO:Ag薄膜的结构和光电学性质。结果表明,ZnO:Ag薄膜为多晶结构,且随着退火温度的升高,样品的结晶性能不断提高,晶粒尺寸从500℃的12.37 nm增加到800℃的32.36 nm;光致发光(PL)谱的紫外发射峰随着退火温度的增加向短波方向移动;薄膜的载流子浓度随退火温度升高而单调增加,电阻率则降低;迁移率的变化较为复杂,500℃退火的样品迁移率达到最大值58.80 cm2/Vs,800℃样品的最低为3.16 cm2/Vs。Ag doped ZnO（ZnO：Ag） thin films were deposited on n-Si（100） substrates by E-beam evaporation technique.The films were subsequently subjected to post annealing at 500,600,700 and 800 ℃ for 4 h under 200 Pa oxygen pressure.The structural,electrical and optical properties of the samples were studied by X-ray diffraction,Van der Pauw method and photoluminescence（PL）,respectively.The results show that the samples are polycrystalline.The crystalline performance has been improved by annealing.The crystalline size increases from 12.37 nm to 32.36 nm when the annealing temperature increases from 500 ℃ to 800 ℃.Ultraviolet emission peak of PL shifts to short wavelength with the increasing of annealing temperature.The carrier concentration increases while the resistivity decreases as the annealing temperature increases.The carrier mobility has the maximum of 58.80 cm^2/Vs at 500 ℃ and the minimum of 3.16 cm^2/Vs at 800 ℃.

关 键 词：Ag掺ZnO(ZnO:Ag)薄膜 电子束蒸发 退火 光致发光(PL) 

分 类 号：O484[理学—固体物理]