Temperature dependence of photoluminescence property in BaIn_2O_4  

Temperature dependence of photoluminescence property in BaIn_2O_4

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作  者:邓惠勇 王奇伟 任平 吴杰 陶俊超 陈鑫 戴宁 

机构地区:[1]National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences [2]Department of Energy Sources and Environment Engineering,Shanghai University of Electric Power

出  处:《Chinese Optics Letters》2011年第1期72-74,共3页中国光学快报(英文版)

基  金:supported by the National "973" Program of China (No.2010CB933700);the National Natural Science Foundation of China (Nos.10804117 and 60221502);the Shanghai Natural Science Foundation(No.08ZR1421900);the Knowledge Innovation Program of the Chinese Academy of Sciences

摘  要:The temperature-dependent photoluminescence (PL) spectra of Baln204, prepared by coprecipitation, are measured and discussed. Aside from the reported 3.02-eV violet emission, the 1.81-eV yellow emission in- volved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV. With the temperature increasing, the peak energies for both emissions show a red shift. Moreover, the yel- low emission intensity decreases while the violet emission intensity increases. The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation, indicating a fitted activation energy at 19.2 meV.The temperature-dependent photoluminescence (PL) spectra of Baln204, prepared by coprecipitation, are measured and discussed. Aside from the reported 3.02-eV violet emission, the 1.81-eV yellow emission in- volved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV. With the temperature increasing, the peak energies for both emissions show a red shift. Moreover, the yel- low emission intensity decreases while the violet emission intensity increases. The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation, indicating a fitted activation energy at 19.2 meV.

关 键 词:In BA Temperature dependence of photoluminescence property in BaIn2O4 

分 类 号:O482.31[理学—固体物理]

 

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