Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO_2/TiAu/SiO_2 structure  

作　　者：BAI YiMing WANG Jun WANG Yu ZHANG Han CHEN NuoFu YAO JianXi HUANG TianMao WANG YanShuo ZHANG XingWang WU JinLiang 

机构地区：[1]New and Renewable Energy of Beijing Key Laboratory,North China Electric Power University,Beijing 102206,China [2]National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [3]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Science China(Technological Sciences)》2011年第4期830-834,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 61006050, 20876040);the Natural Science Foundation of Beijing, China (Grant No. 2102042);the National Basic Research Program of China ("973" Project)(Grant No. 2010CB933800);the Fundamental Research Funds for the Central Universities (Grant No. 10QG24)

摘　　要：A novel interconnected structure consisting of a conventional polyimide layer(PM) and an additional SiO2/TiAu/SiO2 sandwich multilayer has been firstly proposed for improving the performance of GaAs micro-solar cell array.The specific experimental investigations on the array with 108 unit cells have demonstrated that the novel structure of PM/SiO2/TiAu/SiO2 can effectively enhance the open-circuit voltage from 75 to 84 V and the fill factor from 35% to 57%.The performance improvement of our devices can be attributed to two aspects.Firstly,the TiAu shielding film can prevent the incident light from penetrating into the GaAs substrate so as to induce the serious substrate leakage current.Secondly,the compact texture of SiO2 in the novel structure can reduce the perimere recombination due to the crackle or shrinkage of PM.It is indicated that the novel structure can distinctly reduce the leakage current and improve output characteristic of micro-solar cells.

关 键 词：micro-solar cell SI-GAAS leakage current insulating layer 

分 类 号：TM615[电气工程—电力系统及自动化] TN304.23[电子电信—物理电子学]