Cr/Cu/Al/Cr薄膜电极的防氧化性能  

Oxidation-Resistant of Cr/Cu/Al/Cr Thin Film Electrodes

作　　者：翁卫祥[1] 于光龙[1] 贾贞[1] 李昱[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《液晶与显示》2011年第2期183-187,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家"863"计划重大专项(No.2008AA03A313);福建省重大科技专项(No.2004HZ01-2);福州大学博士基金(No.826768)

摘　　要：采用Al作为Cu导电层的主要防氧化保护层,在普通浮法玻璃上利用磁控溅射和湿法刻蚀技术制备Cr/Cu/Al/Cr复合薄膜及其电极,研究不同的热处理温度对复合薄膜及其电极的结构、表面形貌和导电性能的影响。由于有Al层作为保护层,在热处理过程中,Al先与穿过Cr保护层的氧进行反应,从而可以更有效地保护Cu膜层在较高的温度下不被氧化,所制备的薄膜在经过600℃的热处理之后仍然具有较好的导电性能。而对于Cr/Cu/Al/Cr电极,侧面裸露的金属层在热处理过程中的氧化是其导电性能逐渐下降的主要原因,退火温度超过500℃之后,电极侧面裸露部分的氧化范围不断往电极的中间扩散,导致了薄膜电极导电性能显著恶化。虽然如此,Cr/Cu/Al/Cr薄膜电极在430℃附近仍然具有较好的导电性能,电阻率为7.3×10-8Ω.m,符合FED薄膜电极的要求。以此薄膜电极构建FED显示屏,通过发光亮度均匀性的测试验证了Cr/Cu/Al/Cr电极的抗氧化性。Novel Cr/Cu/Al/Cr thin film electrodes were prepared by DC magnetron sputtering and wet etching technology,in which Al thin film was used as the protective layer for Cu layer.The change of the crystal structure,surface morphology and electric resistivity of the thin films and electrodes before and after heat treatment were studied.The Al layer played a key role as an oxygen diffusion barrier layer,for its protection,the Cr/Cu/Al/Cr thin film still had good thermal stability when the heat treatment was below 600 ℃.Meanwhile,the oxidation diffusion from the lateral edge of the electrodes as the temperature increased caused the decrease of the conduction of the electrodes.The electric resistivity was increasing obviously after 500 ℃ heat treatment,and the oxidation region was expanded from the edge to the surface of the electrode.Nonetheless,the thin film electrode fulfilled the requirements of field emission device for its stable resistance when post annealing tempera-ture was 430 ℃,which was 7.2×10-8 Ω·m.Based on the new electrode,the FED device was fabricated for verifying its oxidation resistance.

关 键 词：Cr/Cu/Al/Cr薄膜 薄膜电极 表面形貌 防氧化性能 

分 类 号：TN104.3[电子电信—物理电子学]