MIM薄膜二极管Ta_2O_5绝缘膜的AFM分析及其I-V特性研究  

AFM Analysis of Ta_2O_5 Insulator Film and the I V Characteristics Investigation of the MIM Thin Film Diode

作　　者：黄蕙芬[1] 

机构地区：[1]东南大学电子工程系,南京210096

出　　处：《固体电子学研究与进展》1999年第4期372-376,共5页Research & Progress of SSE

基　　金：江苏省应用基础资助课题!(编号BJ97016)

摘　　要：制备了一种用于有源矩阵液晶显示的Ｔａ－Ｔａ２Ｏ５－Ｔａ 结构ＭＩＭ 薄膜二极管。其中，作为介质层的Ｔａ２Ｏ５ 膜由不同成膜技术得到。采用原子力显微镜（ＡＦＭ）对Ｔａ２Ｏ５ 膜进行了表面形貌分析，并对其ＭＩＭ 二极管的伏安特性进行了测试与比较。结果表明，用溅射／阳极氧化二步法制备的Ｔａ２Ｏ５ 膜作绝缘层的ＭＩＭ 二极管，其Ｉ－Ｖ特性的非线性系数β＝ ２５，远高于阳极氧化法及溅射法所得Ｔａ２Ｏ５ 膜的ＭＩＭ 二极管的非线性系数（β＝ ９和５），电流通断比（１０５）分别较阳极氧化法及溅射法工艺制备的ＭＩＭ－ＴＦＤ高１和３ 个数量级。A Ta Ta 2O 5 Ta MIM thin film diode for active matrix LCD was fabricated in this paper. The Ta 2O 5 thin film insulator layer of the MIM thin film diode was formed by different processes. The surface morphologies of tantalum oxide films using different preparing methods were analyzed by AFM (Atomic Force Microscopy ). The I V characteristics of the MIM thin film diodes were also measured and compared. The results showed that the I V characteristics of the MIM thin film diode with Ta 2O 5 film fabricated by the two step sputtered/anodized method, such as non linear characteristic, switching on/off ratio and the symmetrization of the I V curve, were all better than those of the MIM thin film diode with Ta 2O 5 film fabricated by other methods.

关 键 词：薄膜二极管 原子力显微镜 TA2O5 绝缘膜 I-V特性 

分 类 号：TN311.5[电子电信—物理电子学]