非掺杂半绝缘LECGaAs中电参数与碳浓度及EL2浓度的关系  

Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs

作　　者：杨瑞霞[1] 李光平[2] 

机构地区：[1]河北工业大学电子系,天津300130 [2]天津电子材料研究所,300192

出　　处：《固体电子学研究与进展》1999年第4期428-432,共5页Research & Progress of SSE

基　　金：河北省自然科学基金资助项目!(195051)

摘　　要：利用范德堡方法和光吸收方法研究了非掺杂半绝缘（ＳＩ）ＬＥＣＧａＡｓ 中电参数与碳（Ｃ）浓度及ＥＬ２ 浓度的关系。通过比较实验结果和理论计算结果发现。The correlations among the electrical properties, the EL2 concentration and the carbon acceptor concentration in undoped semi insulating LECGaAs are investigated quantitatively by use of optical absorption method and Van der Pauw method. Comparisons are made between the experiment results and those calculated from equation of neutrality charge and carrier statistics theory. It is found that other acceptors, except carbon, exist and play an important role in electrical compensation in this semi insulating material.

关 键 词：砷化镓 碳 EL2 电参数 掺杂 半导体材料 

分 类 号：TN304.23[电子电信—物理电子学]