低误差开关电流存储单元  

Low Error Switched-Current Memory Cell

作　　者：房体友[1] 何怡刚[1] 赵文山[1] 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082

出　　处：《微电子学》2011年第2期269-273,共5页Microelectronics

基　　金：国家杰出青年科学基金资助项目(50925727);国家自然科学基金资助项目(60876022);国家863计划基金资助项目(2006AA04A104);湖南省科技计划项目(2008Gk2022);广东省教育部产学研项目(2009B090300196)

摘　　要：详细分析了限制开关电流(SI)精度的主要误差,在共源-共栅组态存储单元的基础上,根据在开关晶体管关断前消除反型层可以改善电荷注入误差的原理,提出一种新型低误差开关电流存储单元。其主要思想是通过消除开关晶体管沟道内的可动电荷、降低存储单元的输出电导,以改善电荷注入误差和电导比误差。采用TSMC 0.25μm CMOS模型参数进行HSPICE仿真,结果表明,该结构能够很好地降低电路误差,提高开关电流电路的精度。Main errors limiting the accuracy of the switch current（SI） circuit were analyzed in detail.According to the theory that charge injection error could be improved by removing inversion layer before switching transistors are switched off,a new low-error switch current memory cell was proposed based on cascode configuration memory cell.The main idea is to reduce output conductance of the memory cell by removing mobile charge in the channel of switching transistors to improve charge injection error and conductance ratio error.HSPICE simulation was made on the device using model parameters of TSMC＇s 0.25 μm CMOS process.Results indicated that the proposed structure could reduce circuit errors and improve the accuracy of the switch current circuit.

关 键 词：开关电流 存储单元 共源-共栅 反型层 电导比误差 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]