深亚微米器件中氧空位对栅漏电流的影响  

Effects of Oxygen Vacancy on Gate Leakage Current in Deep Submicron Device

作　　者：李海霞[1] 毛凌锋[1] 查根龙[1] 

机构地区：[1]宿迁学院,江苏宿迁223800

出　　处：《微电子学》2011年第2期300-303,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60606016)

摘　　要：描述了影响硅器件性能的二氧化硅中的缺陷,介绍了氧空位的概念,分析计算了随机氧空位对栅漏电流的影响。模拟结果表明:当氧空位在栅氧化层中随机变化时,引起的栅漏电流的变化是在一定值附近上下波动;栅漏电流随氧化层厚度的减小而增大,因此,在小尺寸器件中,必须考虑氧空位对栅漏电流的影响。但当厚度在特定值及特定电场下时,单个氧空位引起的栅漏电流增加可以忽略。Effects of random oxygen vacancy on gate leakage current were calculated.Simulation results showed that the gate leakage current varied around the average value with random changing position of oxygen vacancy in oxide,and gate leakage current increased with decreasing gate oxide thickness.In general,for small-size device,effects of oxygen vacancy on gate leakage current should be considered.However,when oxide thickness increased to a fixed value at a specific oxide field,the increase in gate leakage current caused by a single oxygen vacancy could be neglected.

关 键 词：氧空位 栅漏电流 深亚微米器件 

分 类 号：TN303[电子电信—物理电子学]