一种新型的MOS栅控晶体管——MOSGCT  

MOSGCT——New MOS\|Gated Controlled Transistor

作　　者：刘海涛[1] 陈启秀[1] 白玉明 

机构地区：[1]浙江大学功率器件研究所,杭州310027

出　　处：《Journal of Semiconductors》1999年第12期1075-1080,共6页半导体学报（英文版）

基　　金：博士点专项基金资助!批准号:9533505

摘　　要：提出了一种新型的ＭＯＳ栅控晶体管——ＭＯＳＧＣＴ。该结构在ＤＭＯＳ的一侧引入一个ＮＰＮ 晶体管，使之在正向时具有ＤＭＯＳ与ＮＰＮ 双极晶体管的混合特性，在关断时具有与ＤＭＯＳ相似的快速关断性。对耐压６００Ｖ 的ＭＯＳＧＣＴ 进行二维数值分析，其结果表明ＭＯＳ－ＧＣＴ的电流密度比ＤＭＯＳ提高４５％ ，且关断时间小于１００ｎｓ．A new power device structure, the MOS\|Gated Controlled Transistor (MOSGCT) in which an NPN transistor is introduced in one side of DMOS. The structure has a mixed characteristics of DMOS and NPN transistor during on\|state, and has very short switching time similar to DMOS during the turn\|off process. The results of two\|dimensional numerical simulation performed on the 600V devices indiacate a 45% improvement in on\|state current density over the DMOS.Furthermore, the turn\|off time is less than 100ns. EEACC:2560R, 2560S

关 键 词：MOS栅控晶体管 MOSGCT 功率晶件 MOSFET 

分 类 号：TN386.1[电子电信—物理电子学]