大面积六硼化镧薄膜阴极制备及性能  

Characteristics of lanthanum hexaboride thin film cathode deposited on large area substrate

作　　者：刘曾怡[1] 林祖伦[1] 王小菊[1] 曹贵川[1] 祁康成[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《强激光与粒子束》2011年第4期1101-1104,共4页High Power Laser and Particle Beams

摘　　要：采用电子束蒸发方法在大面积玻璃基底和钽基底上沉积六硼化镧薄膜阴极。分别对玻璃基底上沉积的六硼化镧薄膜的生长取向、附着力与不同蒸发角度(0°,30°,45°和60°)的关系进行了研究;对钽基底上沉积的六硼化镧薄膜阴极的逸出功进行了研究。结果表明:在基底温度为250℃时,制备的六硼化镧薄膜具有(100)晶面择优生长的特点;蒸发角度为45°时,六硼化镧薄膜(100)晶面的晶格常数与靶材相差最小,晶粒较小;根据优化的工艺制备的六硼化镧薄膜阴极的逸出功为2.56 eV。The lanthanum hexaboride（LaB6） thin film cathode was deposited on large-area glass substrate and Ta substrate by the method of electron-beam deposition under the substrate temperature of 250 ℃ and the vacuum of 2×10-4 Pa.The deposited LaB6 thin films are predominantly（100）-oriented.The lattice displacement between LaB6 film and the LaB6 bulk target is minimal and the crystal size is relatively small at 45° deposition.Theoretically,the LaB6 film deposited at 45° has the possibility of forming low stress contact on different substrates.The work function of the LaB6 film cathode was measured to be 2.56 eV,which also proves the（100）-oriented growth of LaB6 films.

关 键 词：电子束蒸发 六硼化镧薄膜 蒸发角度 逸出功 大面积薄膜阴极 

分 类 号：TN132[电子电信—物理电子学]