坩埚旋转下降法生长硒镓银单晶体  

Growth of AgGaSe_2 Single Crystal by the Descending Crucible with Rotation Technique

作　　者：赵北君[1] 朱世富[1] 李正辉[1] 傅师申 于丰亮[1] 李奇峰[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》1999年第4期323-327,共5页Journal of Synthetic Crystals

基　　金：核工业科学基金

摘　　要：本文报道了硒镓银多晶原料合成与单晶生长的新方法———熔体温度振荡法和坩埚旋转下降法。５ ～６Ｎ 高纯Ａｇ 、Ｇａ 、Ｓｅ 单质按ＡｇＧａＳｅ２ 化学配比富０ ．５ ％ Ｓｅ 配料，１１００ ℃下合成并在熔点附近进行温度振荡，获得了高纯单相致密的ＡｇＧａＳｅ２ 多晶材料。用合成的多晶为原料，采用坩埚旋转下降法生长出２２ ×８０ｍｍ 的ＡｇＧａＳｅ２ 单晶锭。晶体外观完整，在１０ ．６μｍ 附近红外透过率达６２ ．４ ％ ，吸收系数低于０ ．０１ｃｍ － １ ，对１０ ．６μｍ ＣＯ２ 激光实现倍频，能量转换效率达１２ ％ 。A new procedure of polycrystalline synthesis and single crystal growth on AgGaSe 2 —— melt temperature oscillation and descending crucible with rotation method was reported in this paper.A single phase and high mass density AgGaSe 2 was synthesized from the high pure elements of Ag,Ga,Se at 1100℃.The original charges were rich in selenium 0.5% with respect to stoichiometric composition and the temperature oscillations were carried out close by the melt point.The crack free single crystal of AgGaSe 2 22mm in diameter and 80mm high has been grown using the polycrystalline materials by the descending crucible with rotation.The infrared transmission of the crystal is 62.4% at 10.6μm,and the absorption coefficient is lower than that of 0.01 cm -1 .Using the crystal for second harmonic generation of 10.6μm CO 2 pulsed laser output,a 12% harmonic energy conversion efficiency was obtained.

关 键 词：非线性光学晶体 硒镓银 单晶 坩埚旋转下降法 

分 类 号：TN204[电子电信—物理电子学] O782.5[理学—晶体学]