掺杂C_(60)薄膜的制备及光电特性  

Preparation and Electrical & Optical Properties of Doped C_ (60 ) Thin Films

作　　者：邹云娟[1] 宋雪梅[1] 王波[1] 陈光华[1] 严辉[1] 

机构地区：[1]北京工业大学应用物理系,北京100022

出　　处：《人工晶体学报》1999年第4期359-363,共5页Journal of Synthetic Crystals

基　　金：北京市自然科学基金;北京市青年科技骨干基金;北京市跨世纪优秀人才计划资助

摘　　要：在电弧法制备的过程中添加氮气或Ｂ２Ｏ３ 粉末，制备了氮、硼替位式掺杂Ｃ６０ 。硼掺杂和氮掺杂Ｃ６０ 均显示明显的半导体导电特性，且室温电导率比未掺杂Ｃ６０ 薄膜提高１ ～２ 个量级。用共蒸发的方法制备出了硫掺杂Ｃ６０ 薄膜，其电导率～温度曲线中存在一个过渡区，过渡区两侧表现出明显的半导体导电特性，这与掺入Ｃ６０ 薄膜中的硫杂质的存在状态有关。其室温电导率比掺杂前提高４个量级，光致发光也明显增强。另外还报道了用离子注入和射频等离子体辅助真空沉积的方法制备掺杂Ｃ６０ 薄膜的初步结果。The boron doped and nitrogen doped C 60 thin films were prepared by arc discharge.The electrical transport behavior with the obvious semiconductive property has been shown in the boron doped and nitrogen doped C 60 films.The conductivity and activation energy of both doping C 60 films change little compared with that of pristine C 60 film.The sulfur doped C 60 films were deposited by simultaneous evaporation.The semiconductive property has also been confirmed from the room temperature to 368K and above 388K.A transition in the curve of conductivity versus temperature has been found at 368—388K,which could be attributed to the structure change of the sulfur.The conductivity increased by four orders of magnitude and photoluminescence was enhanced greatly.The initial investigations on preparation of doping C 60 films by ion implantation and RF plasma chemical vapor deposition were also reported.

关 键 词：掺杂 电导率 碳60 光电性 薄膜 半导体 

分 类 号：O484.42[理学—固体物理] TN304.18[理学—物理]