氧化物材料HoMnO_3的复阻抗谱分析  

Complex Impedance Spectroscopy Analysis of HoMnO_3 Oxide Materials

作　　者：张立新[1] 袁德华[1] 赵玉杰[1] 戴振宏[1] 王伟田[1] 

机构地区：[1]烟台大学光电信息科学技术学院,山东烟台264005

出　　处：《烟台大学学报（自然科学与工程版）》2011年第2期97-100,共4页Journal of Yantai University(Natural Science and Engineering Edition)

基　　金：国家自然科学基金资助项目(10704065);山东省自然科学杰出青年基金资助项目(JQ200802)

摘　　要：模拟了氧化物多晶材料中晶粒和晶界的介电响应,分析了电阻和电容与阻抗谱之间的关系,利用阻抗谱斜率的关系来验证拟合数据的正确性.用高温固相反应法制备了钙钛矿氧化物材料HoMnO3,利用复阻抗分析谱分析了该材料在650 Hz～1 MHz频率范围内的介电响应,结果表明:制备的氧化物材料是由晶粒和晶界组成的多晶材料,并且高频部分反映HoMnO3材料晶粒行为;低频部分反映HoMnO3材料的晶界行为.通过数据拟合可以得到其晶粒和晶界的电阻分别约为105Ω和106Ω;晶粒和晶界的电容均约为10-9 F.The dielectric response of grains and grain boundary of oxide polycrystalline materials are simulated in this paper,we analyze the relationship between impedance and resistance or capacitance,the accuracy of the fitting data being verified by using the slope of impedance spectroscopy.Perovskite oxide materials HoMnO3 is prepared with high temperature solid reaction,and dielectric response is analyzed by complex impedance spectroscopy in 650Hz-1MHz.The results show that the material is composed of grains and grain boundary,and high-frequency part shows grain response,low-frequency shows the grain boundary behavior.The resistances of grain and grain boundary which can be obtained by fitting are about 105Ω and 106Ω,respectively;the capacitances of grain and grain boundary are both about 10-9F.

关 键 词：复阻抗 晶粒和晶界 弛豫频率 

分 类 号：O472[理学—半导体物理]