Dependence of residual voltage ratio behavior of SnO_2-based varistors on Nb_2O_5 addition  

作　　者：WEI QiaoYuan HE JinLiang HU Jun 

机构地区：[1]State Key Laboratory of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Science China(Technological Sciences)》2011年第6期1415-1418,共4页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundations of China (Grants Nos 50425721 and 50737001)

摘　　要：SnO2-based varistor samples doped with Co2O3,Nb2O5 and Cr2O3 were prepared by ball-mixed oxide method.The microstructure,nonlinear I-V characteristic and surge current performances of these samples were investigated.This paper mainly focused on the dependence of the residual voltage ratio behavior of SnO2-based varistors on Nb2O5 addition,different factors influencing the residual voltage ratio in different concentration of Nb2O5 were analyzed.The Nb2O5 addition influences its residual voltage ratio by changing the grain size,forming defects(especially the free electrons) and cumulative effect.The measured results indicated that the optimally obtained sample with 0.07mol% Nb2O5 possesses the lowest residual voltage ratio of 1.86,the corresponding nonlinear coefficient and the threshold electric field are 42.6 and 364.6 V/mm,respectively.

关 键 词：SnO2-based varistor NB2O5 residual voltage ratio 

分 类 号：TM862[电气工程—高电压与绝缘技术] TS207.3[轻工技术与工程—食品科学]