柔性光电器件发光层用ZnO微纳阵列/聚合物复合材料  

Polymer/ZnO Micro-Nano Array Composites for Light-Emitting Layer of Flexible Optoelectronic Devices

作　　者：宋继中[1] 贺英[1] 朱棣[1] 陈杰[1] 裴昌龙[1] 王均安[1] 

机构地区：[1]上海大学材料科学与工程学院高分子材料系,上海200072

出　　处：《物理化学学报》2011年第5期1207-1213,共7页Acta Physico-Chimica Sinica

基　　金：上海市科委纳米技术专项基金(1052nm07400);上海市重点学科建设项目(S30107);上海大学研究生创新基金(SHUCX102259)资助~~

摘　　要：采用简单的低温(温度未超过100°C)溶液法在具有较好柔韧度的基于聚对苯二甲酸乙二醇酯(PET)衬底的铟锡氧化物(ITO)导电膜(PET/ITO)上成功制备了聚丙烯酰胺(PAM)修饰的ZnO微纳阵列.用X射线衍射(XRD)仪和扫描电子显微镜(SEM)对ZnO微纳阵列的晶体结构和表面形貌进行了表征,结果表明ZnO阵列的平均直径为150nm,长度为3μm,端面具有六边形结构,沿[0001]方向择优生长,较好地垂直在PET/ITO上;探讨了ZnO微纳阵列在PAM存在下的形成机理以及所制备的ZnO阵列在柔性光电器件方面的应用;ZnO微纳阵列的光致发光(PL)性能表明,在没有PAM的存在下,具有蓝光(457nm)和绿光(530nm)缺陷发射峰,这可能是电子分别从扩展态锌间隙(Zni)到价带和从导带到锌位氧(OZn)的跃迁引起的,而在PAM存在下所制备的PAM/ZnO阵列仅仅在400nm处有一个发射峰,这是由于电子从Zni到价带的跃迁引起的.基于PAM/ZnO的柔性器件具有较好的二极管特性,表明其在柔性光电器件方面的应用极具潜力.We prepared PAM/ZnO micro-nano arrays on indium tin oxide （ITO） conductive films based on poly（ethylene terephthalate） （PET） substrates （PET/ITO） by a low cost and low temperature chemical solution approach. The morphology and crystal structure of the nanorod arrays were characterized by scanning electron microscopy （SEM） and X-ray diffraction （XRD）. The results show that the ordered arrays of the ZnO and PAM/ZnO arrays grew vertically on the substrates and revealed that the nanorods grew along the [0001] direction of the ZnO crystallites. SEM images showed that most of the ZnO arrays had an average diameter of 150 nm and their typical length was about 3 μm. The optical properties of the ZnO and PAM/ZnO micro-nano arrays were characterized by photoluminescence at room temperature. The growth mechanism of the PAM/ZnO arrays and their possible application in flexible optoelectronic devices are discussed. Defect peaks of the blue peak at 457 nm and the green peak at 530 nm were observed in the photoluminescence （PL） spectrum of the ZnO micro-nano arrays in the absence of PAM. The blue and green emissions are attributed to electron transitions from the extended state Zni to the valance band and from the conduction band to antisite oxygen （OZn）, respectively. The PAM/ZnO arrays only had a UV peak at 400 nm, and this was caused by electron transitions from the interstitial Zn （Zni） to the valance band. Flexible PAM/ZnO devices with good diode characteristics are suitable for flexible optoelectronic applications.

关 键 词：氧化锌微纳阵列 发光机理 柔性光电器件 二极管特性 

分 类 号：TB332[一般工业技术—材料科学与工程]