一种低温漂的CMOS带隙基准电压源的研究  

Study of a CMOS band-gap reference circuit with low temperature drift

作　　者：樊艳[1] 王丽侠[1] 

机构地区：[1]唐山学院信息工程学院,河北唐山063000

出　　处：《电子设计工程》2011年第8期164-166,共3页Electronic Design Engineering

摘　　要：为了满足深亚微米级集成电路对低温漂、低功耗电源电压的需求，提出了一种在0．25μmN阱CMOS工艺下，采用一阶温度补偿技术设计的CMOS带隙基准电压源电路。电路核心部分由双极晶体管构成，实现了yM和y，的线性叠加，获得近似零温度系数的输出电压。T—SPICE软件仿真表明，在3．3V电源电压下，当温度在-20～70℃之间变化时，该电路输出电压的温度系数为10×10^-6/℃，输出电压的标准偏差为1mV，室温时电路的功耗为5．2831mW，属于低温漂、低功耗的基准电压源。To meet the requirement of low tempreture drift and low power consumption power supply in submicron integrated circuit, a CMOS band-gap reference circuit with first-order temperature compensation was presented. The presented eireuit is fabricated by using the 0.25μm N-well CMOS process of chartered corp. The core circuit of the CMOS band-gap reference circuit was constitued of bipolar transistors,which came ture Vrr plusing Vr linearly to obtain near zero temperature coefficient output voltage . The simulation results under 3.3 V power supply voltage for this circuit by using T-SPICE show that the temperature coefficient is about 10~10-6/℃ in the range -20℃ to 70℃. The standard deviation of output voltage is lmV. The power consumption is 5.2831 mW. It is a low temperature coefficients and low power consumption band-gap voltage reference.

关 键 词：带隙参考电压源 温度补偿 电源抑制比 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN72