掺杂Cu的AgSbTe四元合金电学性能  

Electrical properties of Cu-doped AgSbTe alloys

作　　者：付红[1] 应鹏展[1] 颜艳明[1] 张晓军[1] 高榆岚[1] 

机构地区：[1]中国矿业大学,江苏徐州221116

出　　处：《兵器材料科学与工程》2011年第2期4-7,共4页Ordnance Material Science and Engineering

基　　金：国家自然科学基金资助(50871056)

摘　　要：AgSbTe基合金具有良好的热学和电学性能,在发电和制冷领域获得广泛应用。通过放电等离子烧结技术制备（AgSbTe2）0.405（Sb2-xCuxTe3）0.064（x=0,0.025,0.05,0.1,0.2）5种合金,观察其微观结构,并研究316~548 K温度区间内电学性能的变化。结果表明,x=0和x=0.025两种样品形成单相,其他3种样品都形成AgSbTe2和Sb2Te多相。掺杂不同比例的Cu元素后,各样品的功率因子都比掺杂前有不同程度的降低,当x=0.2时,样品的电学性能下降最明显。Homologous series of AgSbTe alloys are widely used in power generation and refrigeration fields for many years,because of their better thermoelectric（TE） property.（AgSbTe2）0.405（Sb2-xCuxTe3）0.064（x=0,0.025,0.05,0.1,0.2） alloys were prepared by spark plasma sintering and their microstructures and electrical properties were evaluated in the temperature range from 316 K to 548 K.Through XRD analysis,the singal phase in x=0 and x=0.025 samples,AgSbTe2 and Sb2Te phase in other samples were observed.Measurements indicate that the power factor of samples decreases after doping with Cu,the electrical properties have biggest decline for the sample at x=0.2.

关 键 词：AgSbTe合金 掺杂Cu 微观结构 电学性能 

分 类 号：TN304[电子电信—物理电子学]