低电压CMOS压控振荡器设计  

Design of CMOS Low Voltage Controlled Oscillators

作　　者：刘华珠[1] 黄海云[2] 

机构地区：[1]东莞理工学院电子工程学院,广东东莞523808 [2]杭州电子科技大学新型电子器件研究所,杭州310018

出　　处：《半导体技术》2011年第5期382-384,396,共4页Semiconductor Technology

基　　金：东莞市高等院校科研机构重点科技计划项目(200910814002)

摘　　要：设计和分析了一种低电压CMOS压控振荡器,对设计的电路进行理论分析和模型建立,并使用仿真工具对电路进行验证和优化。设计中主要考虑相位噪声和调谐宽度等指标,通过采用电感电容滤波技术以及合理调整电路结构和元器件参数,使相位噪声和调谐宽度均达到了较高的性能指标。结果表明,在1.2 V工作电压下,设计的VCO的尾电流为3 mA,输出振荡频率为2.24~2.57 GHz,中心频率约为2.4 GHz,调谐范围达到13.7%。A low noise CMOS voltage controlled oscillator was designed and analyzed based on CSMC process.The basic theory and small signal model for the VCO were introduced.The performance of the VCO′s phase noise and tuning rang were optimized by the LC noise filtering technology,proper circuit struc-ture and device parameter.The circuit was simulated under supply voltage of 1.2 V.The frequency of the VCO ranges from 2.24 GHz to 2.57 GHz,the tail current is 3 mA,and the tuning range is about 13.7%.

关 键 词：互补金属氧化物半导体 压控振荡器 相位噪声 调谐宽度 滤波器 

分 类 号：TN752.5[电子电信—电路与系统] TN432