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机构地区:[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院研究生院,北京100049
出 处:《激光与光电子学进展》2011年第5期32-40,共9页Laser & Optoelectronics Progress
摘 要:受激发射损耗(STED)显微术利用荧光饱和与激发态荧光受激损耗的非线性关系,并通过限制受激辐射衰减的区域,减少荧光光斑大小,获得小于衍射极限的发光点来提高系统分辨率,从而突破远场光学显微术的衍射极限分辨力限制来实现无接触三维成像。基于受激辐射损耗抑制的物理过程,论述了发生损耗抑制的工作机理和工作条件,介绍了STED系统的分辨率及系统组成,并详尽综述了双光束、双光子、双色、4Pi及松散三重态等STED最新拓展应用技术。最后说明了最新激光技术的进展为开发实用STED技术提供保证,展望了该技术未来发展的重点及应用前景。Technology of stimulated emission depletion (STED) fluorescence microscopy utilizes the nonlinear relationship between the fluorescence saturation and the excited state stimulated depletion with nano-scale resolution. It implements the 3D imaging and breaks the diffraction barrier of the far-field light microscopy by restricting depletion zone at a sub-diffraction spot. Based on the physical process of STED, inhibition mechanism of stimulated emission and working conditions of depletion are reasonedly elaborated. The resolution of STED system and components are described. The STED microscopy has developed with many extendible technologies, such as two- beam, two-photon, dual-color, 4Pi and triplet-state relaxation. Finally, the latest laser technology related to STED, and the application prospect of STED microcopy are introduced.
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