体硅上外延超薄Si1-xGex用于制备SGOI材料  

Growth of ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

作　　者：薛忠营[1,2] 张波[1,2] 魏星[1] 张苗[1] 

机构地区：[1]中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院研究生院,北京100049

出　　处：《功能材料与器件学报》2011年第2期147-150,共4页Journal of Functional Materials and Devices

基　　金：国家重点基础研究发展计划(2010CB832906);上海应用材料研究与发展基金(082SYA1001);新泰课题基金(092XTA1001)

摘　　要：采用减压化学气相沉积的方法在Si衬底上制备了高质量的Si0.75Ge0.25/Si/Si0.86Ge0.14叠层材料,通过TEM、光学显微镜和XRD分析表明,外延的SiGe薄膜具有完好的晶格结构,平整的表面质量,SiGe薄膜处于完全应变状态。通过与Si上外延渐变缓冲层制备的SiGe材料比较发现,使用这种超薄的全应变SiGe叠层材料来制备SGOI,可以大大缩短制备周期,降低制备成本。High quality Si0.75Ge0.25/Si/Si0.86Ge0.14 films were fabricated on bulk Si substrate by reduced pressure chemical vapor deposition（RPCVD） system.Transmission electron microscopy（TEM） and optical microscopy revealed the epitaxial films were of the perfect crystal quality and good surface morphology.X-ray diffraction measurements indicated that Si0.75Ge0.25 and Si0.86Ge0.14 layers were fully strained.Fabricating SGOI materials with this high quality Si0.75Ge0.25/Si/ Si0.86Ge0.14 films will reduce costs and save time significantly compared with fabricating SGOI materials with conventional graded buffer SiGe films.

关 键 词：外延 应变 锗硅 SGOI 

分 类 号：TN304.05[电子电信—物理电子学]