电压补偿法测晶体二极管的正向特性  

Compensate the Method Measure Crystal Diode Just toward the Characteristic

作　　者：冯春杰[1] 邓华军[1] 郭宗富[1] 

机构地区：[1]安顺学院物理与电子科学系,贵州安顺561000

出　　处：《安顺学院学报》2011年第2期85-87,共3页Journal of Anshun University

摘　　要：晶体二极管的主要内部结构为PN结,故晶体二极管具有单向导电性能,且其单向导电性能随PN结掺杂浓度和晶体二极管所处的环境温度的改变而改变。晶体二极管属于非线性元件,理论推导可知其伏安特性曲线为指数曲线。The main inner structure of the crystal diode is PN knot,so the crystal diode has one-way conduct electric function which changing with blending of PN knot density and the environment temperature of the crystal diode.the crystal diode belongs to not-line component and through theory deducing we can know its Fu Anne characteristic curve is index number curve.

关 键 词：晶体二极管 正向特性 电压补偿法 

分 类 号：O47[理学—半导体物理]