SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs  

作　　者：Amit Chaudhry J.N.Roy S.Sangwan 

机构地区：[1]UIET,Panjab University,Chandigarh,India [2]Solar Semiconductro Pvt.Ltd,Hyderabad,India

出　　处：《Journal of Semiconductors》2011年第5期36-41,共6页半导体学报（英文版）

摘　　要：This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （MOS） devices. The results have also been compared with numerically reported results and show good agreement.This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （MOS） devices. The results have also been compared with numerically reported results and show good agreement.

关 键 词：MOBILITY SIGE STRAINED-SI PHONON surface roughness columbic 

分 类 号：TN304.12[电子电信—物理电子学]