PDSOI DTMOS for analog and RF application  

作　　者：王一奇 刘梦新 毕津顺 韩郑生 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]Key Laboratory of Microelectronics Devices & Integrated Technology,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第5期52-56,共5页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(No.2006CB3027-01).

摘　　要：Based on the platform of 0.35μm PDSOI CMOS process technology, the partially depleted siliconon-insulator dynamic threshold voltage （PDSOI DT） NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and con- ventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as Vgs = 0.7 V and Vas = 1 V.Based on the platform of 0.35μm PDSOI CMOS process technology, the partially depleted siliconon-insulator dynamic threshold voltage （PDSOI DT） NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and con- ventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as Vgs = 0.7 V and Vas = 1 V.

关 键 词：SILICON-ON-INSULATOR dynamic threshold voltage analog and RF characteristics 

分 类 号：TN405[电子电信—微电子学与固体电子学]