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机构地区:[1]School of Electronic Science and Technology,Dalian University of Technology [2]School of Electronics and Information Engineering,Dalian Jiaotong University [3]Department of R&D,Sigrity Inc,Santa Clara,CA 95051,USA
出 处:《Journal of Semiconductors》2011年第5期70-75,共6页半导体学报(英文版)
基 金:Project supported by the National Natural Science Foundation of China(No.90607003).
摘 要:Two closed-form formulae for the frequency-dependent resistance of rectangular cross-sectional interconnects are presented. The frequency-dependent resistance R (f) of a rectangular interconnect line or a intercon- nect line with a ground plane structure is first obtained by a numerical method. Based on the strict numerical results, a novel closed-form formula R(f) for a rectangular interconnect alone is fitted out using the Levenberg-Marquardt method. This R(f) can be widely used for analyzing on-chip power grid IR-drop when the frequency is changing. Compared to the previously published R(f) formula for an interconnect, the formula provided here is more accu- rate during the frequency transition range. Also for a bigger width to thickness ratio, this formula shows greater accuracy and robustness. In addition, this paper fits out the closed-form R(f) formula for a micro-strip-like inter- connect (an interconnect with a ground plane), which is a typical structure in the on-chip or package power delivery system.Two closed-form formulae for the frequency-dependent resistance of rectangular cross-sectional interconnects are presented. The frequency-dependent resistance R (f) of a rectangular interconnect line or a intercon- nect line with a ground plane structure is first obtained by a numerical method. Based on the strict numerical results, a novel closed-form formula R(f) for a rectangular interconnect alone is fitted out using the Levenberg-Marquardt method. This R(f) can be widely used for analyzing on-chip power grid IR-drop when the frequency is changing. Compared to the previously published R(f) formula for an interconnect, the formula provided here is more accu- rate during the frequency transition range. Also for a bigger width to thickness ratio, this formula shows greater accuracy and robustness. In addition, this paper fits out the closed-form R(f) formula for a micro-strip-like inter- connect (an interconnect with a ground plane), which is a typical structure in the on-chip or package power delivery system.
关 键 词:INTERCONNECT RESISTANCE Levenberg-Marquardt method
分 类 号:TM152[电气工程—电工理论与新技术]
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