ZnO压敏电阻片残压比与微观结构参数的关系  

Correlation between Residual Voltage Ratio and Microstructure Parameters of ZnO Varistors

作　　者：李盛涛[1] 谢峰[1] 刘辅宜[1] 

机构地区：[1]西安交通大学电力设备电气绝缘国家重点实验室,西安710049

出　　处：《电瓷避雷器》1999年第5期20-24,共5页Insulators and Surge Arresters

基　　金：国家自然科学基金

摘　　要：实验研究了厚度ｄ 对ＺｎＯ压敏电阻片残压比Ｋｒ 的影响规律， 表明残压比同样存在几何效应；实验还表明残压比Ｋｒ 随电位梯度Ｅ１ｍ Ａ成反比例下降，随平均晶粒尺寸μ的增大而增大； 找到了一个综合微观结构参数 平均晶粒尺寸μ和晶粒尺寸方差σ２ 的乘积（σ２μ）， 能较好地反映电性能与微观结构参数的关系。提出了计算机模拟微观结构模型，并用计算机模拟了残压比Ｋｒ 和厚度ｄ、Ｋｒ 和平均晶粒尺寸μ以及Ｋｒ 和乘积σ２μ的关系，The influence of thickness d of ZnO varistors on the residual voltage ratio K \-r has been experimentally studied.It is showed that K \-r also has dimensioned effect. The results show that there is a residual voltage ratio K \-r decreases propor tonally with E \- 1mA ,and increase μ as grain mean size.A synthetic microtructure parameter product of mean grain size μ and quadrate variation σ\+2 (σ\+2μ) was established which can reflect the corelation of electrical properties and microstructure parameters Amicrostructure simulation model was proposed and used to simulate the relations between K \-r and d , K \-r and μ as wellas K \-r and σ\+2μ.The simulated results are consistent with experimental ones

关 键 词：压敏电阻片 残压比 微观结构 氧化锌 避雷器 

分 类 号：TM546[电气工程—电器] TM862