紫外汞灯PVD二氧化硅薄膜特性研究  

A Study on the Characteristics of UV-Hg Lamp Photochemical Vapor Deposited Si0_2 Films

作　　者：景俊海[1] 孙青[1] 孙建诚 付俊兴 

机构地区：[1]西安电子科技大学物理系

出　　处：《微电子学》1990年第4期15-18,共4页Microelectronics

摘　　要：本文论述了紫外汞灯Hg敏化PVD SiO_2薄膜的原理及方法,讨论了PVD SiO_2薄膜的光学特性、结构特性、电学特性、附着力及应力,并分析了薄膜的成份。The Principles and methods of UV-Hg lamp sensitized Photo CVD are described in this paper. And also discussed are the optical, structural and electrical characteristics of Photo-CVD SiO2 films as well as its adhesion and stress. Finally, compositions of the films are analyzed.

关 键 词：紫外汞灯 PVD 二氧化硅薄膜 汞气灯 

分 类 号：TM923.322[电气工程—电力电子与电力传动]