HgMnTe磁性半导体研究概述  

Overview of HgMnTe Semimagnetic Semiconductors

作　　者：朱亮清[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外》2011年第5期1-8,共8页Infrared

摘　　要：HgMnTe是一种典型的Mn基Ⅱ-Ⅵ族窄禁带磁性半导体材料,已成功应用在红外发光和光电探测领域。同时由于磁性元素Mn的引入,HgMnTe材料中存在两类重要的磁交换作用:d-d交换和sp-d交换,导致HgMnTe具有诸如自旋玻璃转变、(巨)负磁阻、磁场诱导绝缘体-金属相变、巨Faraday旋转效应、光致磁化效应和磁极化子效应等特殊光电特性和磁学特性。因此,HgMnTe材料具有许多潜在应用,如磁控光电子器件、量子计算和量子通讯,并可能是实现自旋电子学的一种候选材料。HgMnTe is a typical Mn-basedⅡ-Ⅵnarrow-gap semimagnetic semiconductor and has been successfully applied in infrared photonic devices.Meanwhile,due to the existence of Mn ions,there are two important magnetic interactions in HgMnTe material.They are d-d and sp-d magnetic interactions. These two magnetic interactions make the HgMnTe material have some special photoelectric and magnetic properties such as spin-glass transition,giant negative magnetoresistance,magnetically driven insulator-to-metal,giant Faraday rotation,photoinduced magnetization and magnetic polaron effects.Hence,the HgMnTe material has many potential applications such as magnetic optoelectronic devices,quantum computation and quantum communication and may be a promising candidate material for spintronics.

关 键 词：HgMnTe 磁性半导体 磁交换作用 自旋电子学 

分 类 号：O472.5[理学—半导体物理]