气相沉积法分子筛封装SnO_2纳米半导体材料的研究  

Study on Zeolite Entrapped Nano SnO_2 Clusters by CVD

作　　者：张义华[1] 郭新闻[1] 王祥生 王学勤 周卓华 

机构地区：[1]大连理工大学碳资源综合利用开放实验室,辽宁大连116012

出　　处：《功能材料》1999年第6期651-652,共2页Journal of Functional Materials

基　　金：国家自然科学基金!资助69506001

摘　　要：以Ｙ 型分子筛为主体，采用气相沉积法制备了分子筛封装ＳｎＯ２ 纳米半导体材料，并通过Ｘ 射线衍射、ＩＲ 吸收光谱、紫外漫反射光谱、ＴＥＭ 等手段对不同条件下制备的样品进行了表征。对于钠型的Ｙ 型分子筛来说，几乎无法实现有效沉积，而以交换处理后的Ｙ 型分子筛为主体，则可以在合适的条件下，能够获得高分散的ＳｎＯ２ 物种，并成功地降低了对主体分子筛的破坏程度。Tin dioxide semiconductor nanoclusters were impregnated in the pores and cages of zeolite Y with CVD method.The samples were studied by X-ray powder diffraction,UV-Vis diffuse reflectance spectroscopy,IR spectroscopy and TEM.Na-type zeolites have no activity in assembling by CVD,NH 4Y was suit to be used as host materials,and NH 4 + has some protection effect on zeolite framework.

关 键 词：气相沉积 二氧化锡 纳米粒子 分子筛 半导体 

分 类 号：TN304.21[电子电信—物理电子学]